NCE40P70K MOSFET-P Channel 40V 70A

NCE40P70K MOSFET-P Channel 40V 70A TO252 Datasheet 

The NCE40P70K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications.

General Features

● VDS =-40V,ID =-70A RDS(ON) <10mΩ @ VGS=-10V

● High density cell design for ultra low Rdson

● Fully characterized avalanche voltage and current

● Good stability and uniformity with high EAS

● Excellent package for good heat dissipation

● Special process technology for high ESD capability

Application

● Power switch

● Load switch in high current applications

● DC/DC converters